GaN单晶的HVPE生长与掺杂进展

齐占国, 刘磊, 王守志, 王国栋, 俞娇仙, 王忠新, 段秀兰, 徐现刚, 张雷

Progress in GaN Single Crystals: HVPE Growth and Doping

QI Zhanguo, LIU Lei, WANG Shouzhi, WANG Guogong, YU Jiaoxian, WANG Zhongxin, DUAN Xiulan, XU Xiangang, ZHANG Lei

图8 Fe掺杂GaN

Fig. 8 Fe-doped GaN (a) Resistivity as a function of reciprocal temperature for samples doped with Mn, C, and Fe[8]; (b) Formation energy versus Fermi level for FeGa, FeN and Fei in GaN in different charge states, under Ga-rich conditions[68]; (c) Carrier concentration and Hall mobility versus Fe concentration in GaN films co-doped with Si and Fe[70]; (d) Resistivity versus inverse temperature for samples doped with Fe at various Fe concentrations[63]; (e) Schematic diagram of the energy levels and carrier decay processes of Fe-doped GaN[71]; (f) Carrier trapping time for Fe-doped GaN bulk crystals[72]