GaN单晶的HVPE生长与掺杂进展

齐占国, 刘磊, 王守志, 王国栋, 俞娇仙, 王忠新, 段秀兰, 徐现刚, 张雷

Progress in GaN Single Crystals: HVPE Growth and Doping

QI Zhanguo, LIU Lei, WANG Shouzhi, WANG Guogong, YU Jiaoxian, WANG Zhongxin, DUAN Xiulan, XU Xiangang, ZHANG Lei

图9 C掺杂GaN

Fig. 9 C-doped GaN (a) Formation energy versus Fermi level for CGa and CN in GaN: Ga-rich conditions (left), and N-rich conditions (right)[79]; (b) CN impurity model in GaN[79]; (c) Optical transitions of CN in GaN[79]; (d) Defect density as a function of C concentration[81]; (e) Temperature-dependent resistivity for C doped GaN[82] ; (f) Concentrations of carbon, oxygen, and silicon in C-doped GaN layers versus the input mole fraction of pentane[82]