GaN单晶的HVPE生长与掺杂进展

齐占国, 刘磊, 王守志, 王国栋, 俞娇仙, 王忠新, 段秀兰, 徐现刚, 张雷

Progress in GaN Single Crystals: HVPE Growth and Doping

QI Zhanguo, LIU Lei, WANG Shouzhi, WANG Guogong, YU Jiaoxian, WANG Zhongxin, DUAN Xiulan, XU Xiangang, ZHANG Lei

表1 不同类型掺杂GaN的对比^[2-3,32]

Table 1 Different types of doped GaN^[2-3,32]

Type	Impurities	Dopant	Characteristic	Application	Ref.
n type	Si	SiCl₂H₂	High carrier concentration; anti-surfactant effect	High power and high current optoelectronic devices (LED, LD)
n type	Ge	GeCl₄/Ge₃N₄	Little effect on lattice structure and stress, causing no morphological deterioration, higher carriers concentration than that of Si-doped; creating cavities inside the sample		[3]
p type	Mg	Mg(S)	Increased lattice constant and band gap width, high conductivity	Luminescent device	[32]
Semi- insulating	Fe	Fe(S)/Cp₂Fe	High resistivity (iron showing a parasitic effect, easy to diffuse)	High power/frequency devices, HEMT, photoconductive switch, detectors	[2]
	Mn	Mn(S)
	C	CH₄/C₂H₄/C₅H₁₂