新型GaN与ZnO衬底ScAlMgO4晶体的研究进展

张超逸, 唐慧丽, 李宪珂, 王庆国, 罗平, 吴锋, 张晨波, 薛艳艳, 徐军, 韩建峰, 逯占文

Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate

ZHANG Chaoyi, TANG Huili, LI Xianke, WANG Qingguo, LUO Ping, WU Feng, ZHANG Chenbo, XUE Yanyan, XU Jun, HAN Jianfeng, LU Zhanwen

图15 采用激光分子束外延技术在SCAM衬底上外延生长ZnO薄膜[65]

Fig. 15 ZnO films grown by laser-MBE on SCAM substrate[65] (a) Schematic illustration of the crystal structure of SCAM consisting of alternating layers of wurtzite AlMgO2.5 (0001) and rock salt ScO1.5 (111) layers; During epitaxy of ZnO, the wurtzite layer of SCAM is interconnected with the wurtzite layer of ZnO; (b, c) In-plane twisting (Δφ) and out-of-plane tilting (Δω) of epitaxial ZnO films on SCAM and sapphire substrates as a function of growth temperature; 1 Å=0.1 nm