新型GaN与ZnO衬底ScAlMgO4晶体的研究进展

张超逸, 唐慧丽, 李宪珂, 王庆国, 罗平, 吴锋, 张晨波, 薛艳艳, 徐军, 韩建峰, 逯占文

Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate

ZHANG Chaoyi, TANG Huili, LI Xianke, WANG Qingguo, LUO Ping, WU Feng, ZHANG Chenbo, XUE Yanyan, XU Jun, HAN Jianfeng, LU Zhanwen

图13 不同气氛下退火的SCAM衬底上生长的GaN外延薄膜[86]

Fig. 13 GaN epitaxial films grown on SCAM substrate annealed under different atmospheres[86] (a, b) RHEED patterns for as-grown GaN epitaxial films on SCAM annealed in (a) hydrogen and (b) ambient atmosphere. (c, d) SEM images for as-grown GaN epitaxial films on SCAM annealed in (c) hydrogen and (d) ambient atmosphere; (e, f) Surfaces of GaN epitaxial films after molten KOH etching for (c) and (d), respectively; (g, h) Schematic structures of SCAM annealed in (g) hydrogen and (h) ambient atmosphere; (i, j) HAADF-STEM images and schematic illustrations of (i) Ga-polarity and (j) N-polarity GaN, where the bright spots in the HAADF images indicates Ga atoms and the dark ones indicates N atoms with insets showing the simulated micrograph