新型GaN与ZnO衬底ScAlMgO4晶体的研究进展
Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate
(a) 10 Hz; (b) 20 Hz; (c) 30 Hz; (d) 40 Hz
新型GaN与ZnO衬底ScAlMgO4晶体的研究进展 |
| 张超逸, 唐慧丽, 李宪珂, 王庆国, 罗平, 吴锋, 张晨波, 薛艳艳, 徐军, 韩建峰, 逯占文 |
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Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate |
| ZHANG Chaoyi, TANG Huili, LI Xianke, WANG Qingguo, LUO Ping, WU Feng, ZHANG Chenbo, XUE Yanyan, XU Jun, HAN Jianfeng, LU Zhanwen |
| 图12 不同激光重复频率在SCAM衬底上生长~300 nm GaN外延薄膜的AFM图像[ |
| Fig. 12 AFM images of the ~300 nm-thick GaN epitaxial films grown on SCAM substrates with different laser repetition rates[ (a) 10 Hz; (b) 20 Hz; (c) 30 Hz; (d) 40 Hz |
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