新型GaN与ZnO衬底ScAlMgO4晶体的研究进展

张超逸, 唐慧丽, 李宪珂, 王庆国, 罗平, 吴锋, 张晨波, 薛艳艳, 徐军, 韩建峰, 逯占文

Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate

ZHANG Chaoyi, TANG Huili, LI Xianke, WANG Qingguo, LUO Ping, WU Feng, ZHANG Chenbo, XUE Yanyan, XU Jun, HAN Jianfeng, LU Zhanwen

图11 SCAM衬底的再利用过程[58]

Fig. 11 SCAM substrate reuse process[58] (a) GaN film is naturally separated from SCAM substrate during the growth and cooling process of HVPE; (b) Separated SCAM substrate being cleaved with a razor blade to prepare the reusable SCAM substrate; (c) GaN film grown by MOVPE and HVPE being performed on the reusable SCAM substrate; (d, f) Photo and Nomarski microscope image of naturally separated SCAM substrate; (e, g) Photo and Nomarski microscope image of SCAM substrate cleaved with a razor blade; (h) AFM image of SCAM substrate cleaved with a razor blade