新型GaN与ZnO衬底ScAlMgO4晶体的研究进展
Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate
10 mm-3.5 inch; 1 inch=25.4 mm
新型GaN与ZnO衬底ScAlMgO4晶体的研究进展 |
| 张超逸, 唐慧丽, 李宪珂, 王庆国, 罗平, 吴锋, 张晨波, 薛艳艳, 徐军, 韩建峰, 逯占文 |
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Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate |
| ZHANG Chaoyi, TANG Huili, LI Xianke, WANG Qingguo, LUO Ping, WU Feng, ZHANG Chenbo, XUE Yanyan, XU Jun, HAN Jianfeng, LU Zhanwen |
| 图8 提拉法生长各种直径的SCAM单晶[ |
| Fig. 8 SCAM single crystal with various diameters grown by Cz method[ 10 mm-3.5 inch; 1 inch=25.4 mm |
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