新型GaN与ZnO衬底ScAlMgO4晶体的研究进展

张超逸, 唐慧丽, 李宪珂, 王庆国, 罗平, 吴锋, 张晨波, 薛艳艳, 徐军, 韩建峰, 逯占文

Research Progress of ScAlMgO4 Crystal: a Novel GaN and ZnO Substrate

ZHANG Chaoyi, TANG Huili, LI Xianke, WANG Qingguo, LUO Ping, WU Feng, ZHANG Chenbo, XUE Yanyan, XU Jun, HAN Jianfeng, LU Zhanwen

表1 GaN、ZnO外延层常用衬底

Table 1 Common substrates for GaN and ZnO epitaxial layers

Crystal GaN Sapphire 6H-SiC Si GaAs SCAM Space group $\text{P}{{6}_{3}}\text{mc}$ R 3 ¯ c P 6 3 mc Fd 3 ¯ m F 4 ¯ 3 m R 3 ¯ m Lattice parameters a=b=0.319 nm c=0.519 nm α=β=90° γ=120° a=b=0.476 nm c=1.299 nm α=β=90° γ=120° a=b=0.307 nm c=1.508 nm α=β=90° γ=120° a=b=c=0.543 nm α=β=γ=90° a=b=c=0.565 nm α=β=γ=90° a=b=0.324 nm c=2.515 nm α=β=90° γ=120° Lattice mismatch, Δ a / α GaN 0 16%[61] 3.3%[61] 16%[62] 20%[63] 1.4%[5] ZnO 2.2%[64] 18%[65] 5.8%[66] 16.6%[67] 22%[64] 0.09%[6] Thermal expansion coefficient, α (~300 K)/(×10-6, K-1) αa=3.43 αc=3.34[36] αa=7.5 αc=8.5[68] αa=3.2 αc=3.1[69] α=2.55[70] α=5.73[71] αa=5.59 αc=10.2[37] Melting point/K 2770[54] 2326[72] 3100[69] 1680[73] 1500[74] 2220[38] Thermal conductivity, λ (~300 K)/(W·cm-1·K-1) λc=2.2[75] λc=0.23[68] λc=4.3[76] λ=1.3[77] λ=0.55[78] λc=0.062[50] Growth methods HVPE MOCVD Cz, KY, EFG PVT Cz LEC, VB Cz Cost High Medium High Low Low Low