原子层沉积生长速率的控制研究进展

卢维尔¹, 董亚斌^1,², 李超波¹, 夏洋¹, 李楠¹

Research Progress on Growth Rate Controlling of Atomic Layer Deposition

LU Wei-Er¹, DONG Ya-Bin^1,², LI Chao-Bo¹, XIA Yang¹, LI Nan¹

图6 不同等离子体处理与没有前处理的蓝宝石a和硅衬底表面ALD b沉积的ZnO膜厚随循环数的变化 [ 29 ]
Fig. 6 Change of the thickness of the ZnO thin film deposited on sapphire a and silicon b substrates pretreated with different plasmas with ALD cycle number [ 29 ]