高压PLD法生长p型钠掺杂氧化锌纳米线阵列
邱智文1, 杨晓朋1, 韩军1, 曾雪松2, 李新化2, 曹丙强1

p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition
QIU Zhi-Wen1, YANG Xiao-Peng1, HAN Jun1, ZENG Xue-Song2, LI Xin-Hua2, CAO Bing-Qiang1
图4 最优条件下生长的ZnO:Na纳米线阵列的SEM照片
Fig. 4 SEM images of ZnO:Na nanowire arrays grown under the optimized HP-PLD conditions Growth temperature of 875℃, growth pressure of 3.33×10 4 Pa, Au thin film’s thickness of 4.2 nm a ZnO:Na 0.005 nanowires array; b ZnO:Na 0.03 nanowires array