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高压PLD法生长p型钠掺杂氧化锌纳米线阵列
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邱智文1, 杨晓朋1, 韩军1, 曾雪松2, 李新化2, 曹丙强1 |
p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition
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QIU Zhi-Wen 1, YANG Xiao-Peng 1, HAN Jun 1, ZENG Xue-Song 2, LI Xin-Hua 2, CAO Bing-Qiang 1
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图3 采用不同厚度金催化剂层, 在Si衬底上生长的ZnO:Na纳米线的SEM形貌 Fig. 3 SEM images of ZnO:Na nanowires grown on Si substrates with different thicknesses of Au thin film growth temperature of 875℃, growth pressure of 3.33×10 4 Pa a 0 nm; b 4.2 nm; c 7 nm; d 9.8 nm; e 12.6 nm; f 16.8 nm |
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