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高压PLD法生长p型钠掺杂氧化锌纳米线阵列
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邱智文1, 杨晓朋1, 韩军1, 曾雪松2, 李新化2, 曹丙强1 |
p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition
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QIU Zhi-Wen 1, YANG Xiao-Peng 1, HAN Jun 1, ZENG Xue-Song 2, LI Xin-Hua 2, CAO Bing-Qiang 1
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图2 不同生长压强下Si衬底上ZnO:Na纳米线的SEM照片 Fig. 2 SEM images of ZnO nanowires grown on Si substrates at different pressures Growth temperature of 875℃, Au thin film’s thickness of 4.2 nm a 2.34×10 4 Pa; b 2.93×10 4 Pa; c 3.33×10 4 Pa; d 5.33×10 4 Pa |
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