新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究

新型相变材料Ti_0.5Sb₂Te₃刻蚀工艺及其机理研究

张徐^1,², 刘波¹, 宋三年¹, 姚栋宁¹, 朱敏^1,², 饶峰¹, 吴良才¹, 宋志棠¹, 封松林¹

Study on Etching Process and Mechanism of New Phase Change Material Ti_0.5Sb₂Te₃

ZHANG Xu^1,², LIU Bo¹, SONG San-Nian¹, YAO Dong-Ning¹, ZHU Min^1,², RAO Feng¹, WU Liang-Cai¹, SONG Zhi-Tang¹, FENG Song-Lin¹

图4 不同刻蚀功率获得的刻蚀面的SEM照片
Fig. 4 SEM images of surfaces and cross-sections of TST features after etching at different powers a 100 W; b 200 W; c 300 W; d 400 W CF 4 : 26%; Pressure:13.3 Pa; Etching time: 90 s; Thickness of TST: 200 nm