新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究
张徐1,2, 刘波1, 宋三年1, 姚栋宁1, 朱敏1,2, 饶峰1, 吴良才1, 宋志棠1, 封松林1

Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3
ZHANG Xu1,2, LIU Bo1, SONG San-Nian1, YAO Dong-Ning1, ZHU Min1,2, RAO Feng1, WU Liang-Cai1, SONG Zhi-Tang1, FENG Song-Lin1
图3 不同刻蚀腔内气体压强下获得的刻蚀面的SEM照片
Fig. 3 SEM images of surfaces and cross-sections of TST features after etching at different pressures a 2.66 Pa; b 5.32 Pa; c 7.98 Pa; d 13.3 Pa; e 15.96 Pa CF 4 : 26%; Power: 300 W; Etching time: 90 s; Thickness of TST: 200 nm