新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究
张徐1,2, 刘波1, 宋三年1, 姚栋宁1, 朱敏1,2, 饶峰1, 吴良才1, 宋志棠1, 封松林1

Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3
ZHANG Xu1,2, LIU Bo1, SONG San-Nian1, YAO Dong-Ning1, ZHU Min1,2, RAO Feng1, WU Liang-Cai1, SONG Zhi-Tang1, FENG Song-Lin1
图2 压强为13.3 Pa、刻蚀功率为300 W时, CF 4 浓度对刻蚀速度的影响
Fig. 2 Etch rate as a function of CF4 concentration under constant pressure of 13.3 Pa and power of 300 W