新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究

新型相变材料Ti_0.5Sb₂Te₃刻蚀工艺及其机理研究

张徐^1,², 刘波¹, 宋三年¹, 姚栋宁¹, 朱敏^1,², 饶峰¹, 吴良才¹, 宋志棠¹, 封松林¹

Study on Etching Process and Mechanism of New Phase Change Material Ti_0.5Sb₂Te₃

ZHANG Xu^1,², LIU Bo¹, SONG San-Nian¹, YAO Dong-Ning¹, ZHU Min^1,², RAO Feng¹, WU Liang-Cai¹, SONG Zhi-Tang¹, FENG Song-Lin¹

图1 CF 4 Ar混合气体中含不同浓度CF 4 获得的刻蚀面的SEM照片
Fig. 1 SEM images of surfaces and cross-sections of TST features after etching with different concentrations of CF 4 in the CF 4 Ar gas mixture a 20%, b 26%, c 40%, d 50%, e 60% Etching time: 90 s; Pressure: 13.3 Pa; Power: 300 W; Thickness of TST: 300 nm