氧化锌脱膜和激光刻蚀制备亚微米自支撑聚酰亚胺薄膜及其性能

刘仁臣, 吴永刚, 夏子奂

Preparation and Properties of Submicron Free-standing Polyimide Thin Film Using ZnO Demoulding and Laser Ablation

LIU Ren-Chen, WU Yong-Gang, XIA Zi-Huan

图5 厚度为950 nm的PI薄膜分别用45 mJcm 2 刻蚀100个脉冲a、60 mJcm 2 刻蚀50个脉冲b和75 mJcm 2 刻蚀30个脉冲c的AFM 形貌
Fig. 5 AFM morphologies of the 950 nm PI film etched 100 pulses at 45 mJcm2 a, 50 pulses at 60 mJcm2 b and 30 pulses at 75 mJcm2 c