化学蚀刻法制备纳米硅线作为高能锂离子电池的负极
李剑文, 周爱军, 刘兴泉, 李晶泽

Si Nanowire Anode Prepared by Chemical Etching for High Energy Density Lithium-ion Battery
LI Jian-Wen, ZHOU Ai-Jun, LIU Xing-Quan, LI Jing-Ze
图3 相同沉积条件样品, 在不同比例蚀刻液中蚀刻后的硅片表面SEM照片
Fig. 3 SEM images of the Si wafers etched for 10 min in the solution with wHF:wH2O2 ranging from a 2:1, b 3:1, c 5:1, d 10:1, where all of the catalyst was deposited in the solution included 5 mmolL AgNO3 for 12 min