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, YANG Jun, FENG Xue-Jiao, GAO Peng-Fei, WANG Jiu-Lin, NULI Yan-Na Fig. 1 XRD patterns of the middle products A and porous Si samples B under different synthesis conditions a Ball-milling, 150% Mg, 650 ℃; b Ball-milling, 120% Mg, 650 ℃; c Ball-milling, 120% Mg, 750 ℃; d Ball-milling and tablet, 120% Mg, 650 ℃
