纳米金属氧化物制备多晶Cu(In,Ga)Se<sub>2</sub>薄膜反应过程及其性能研究

纳米金属氧化物制备多晶Cu(In,Ga)Se₂薄膜反应过程及其性能研究

郑春满, 韦永滔, 谢凯, 韩喻

Preparation of Polycrystalline Cu(In,Ga)Se₂ Thin Film with Nano-metal Oxide: the Chemical Reaction Process and Its Properties

ZHENG Chun-Man, WEI Yong-Tao, XIE Kai, HAN Yu

图5 500℃还原制备的CIG薄膜在不同温度下硒化所得CIGS薄膜的SEM照片
Fig. 5 SEM images of CIGS film selenided at different temperatures with CIG film reduced at 500℃ a 450℃; b 500℃; c 550℃