低成本电化学法制备RE2Zr2O7缓冲层

低成本电化学法制备RE₂Zr₂O₇缓冲层

蔡增辉, 刘志勇, 鲁玉明, 蔡传兵

Fabricating RE₂Zr₂O₇ Buffer Layers by Low Cost Electrodeposition

CAI Zeng-Hui, LIU Zhi-Yong, LU Yu-Ming, CAI Chuan-Bing

图6 RE 3+ 与Zr 4+ 摩尔配比为6:4的溶液在0.5 mAcm 2 的电流密度下制备的60 nm GZO和60 nm LZO缓冲层的AFM形貌
Fig. 6 AFM images of 60nm GZO and 60 nm LZO samples prepared at the current density of 0.5 mAcm 2 in solutions with 6:4 mole ratios of RE 3+ to Zr 4+ a 60 nm GZO; b 60 nm LZO