低成本电化学法制备RE2Zr2O7缓冲层

低成本电化学法制备RE₂Zr₂O₇缓冲层

蔡增辉, 刘志勇, 鲁玉明, 蔡传兵

Fabricating RE₂Zr₂O₇ Buffer Layers by Low Cost Electrodeposition

CAI Zeng-Hui, LIU Zhi-Yong, LU Yu-Ming, CAI Chuan-Bing

图5 RE 3+ 与Zr 4+ 摩尔配比为6:4的溶液在0.5 mAcm 2 的电流密度下制备的60 nm GZO和60 nm LZO缓冲层的Phi扫描曲线a和#cod#x003c9;扫描曲线b
Fig.5 a Phi scans and b #cod#x003c9; scans of 60 nm GZO and 60 nm LZO buffer layers prepared at the current density of 0.5 mAcm 2 in solutions with 6:4 mole ratios of RE 3+ to Zr 4+