低成本电化学法制备RE2Zr2O7缓冲层

低成本电化学法制备RE₂Zr₂O₇缓冲层

蔡增辉, 刘志勇, 鲁玉明, 蔡传兵

Fabricating RE₂Zr₂O₇ Buffer Layers by Low Cost Electrodeposition

CAI Zeng-Hui, LIU Zhi-Yong, LU Yu-Ming, CAI Chuan-Bing

图4 La 3+ 与Zr 4+ 摩尔配比为6:4的溶液在0.5 mAcm 2 的电流密度下制备的不同厚度的LZO层上溅射50 nm CeO 2 帽子层后的XRD图谱
Fig.4 XRD patterns of 50 nm CeO 2 cap layers sputtered on LZO samples with different thickness prepared at the current density of 0.5 mAcm 2 in solutions with 6:4 mole ratios of La 3+ to Zr 4+ a MS-CeO 2 60 nm ED-LZO; b MS-CeO 2 75 nm ED-LZO