低成本电化学法制备RE2Zr2O7缓冲层

低成本电化学法制备RE₂Zr₂O₇缓冲层

蔡增辉, 刘志勇, 鲁玉明, 蔡传兵

Fabricating RE₂Zr₂O₇ Buffer Layers by Low Cost Electrodeposition

CAI Zeng-Hui, LIU Zhi-Yong, LU Yu-Ming, CAI Chuan-Bing

图2 Gd 3+ 与Zr 4+ 摩尔配比为6:4的溶液在不同电流密度下得到的60 nm 厚GZO缓冲层退火前的光学显微照片
Fig. 2 Optical images of 60 nm thick GZO buffer layers prepared at different current densities in solutions with 6:4 mole ratios of Gd 3+ to Zr 4+ before annealling a 0.5 mAcm 2 ; b 1.0 mAcm 2 ; c 1.5 mAcm 2