低成本电化学法制备RE2Zr2O7缓冲层

低成本电化学法制备RE₂Zr₂O₇缓冲层

蔡增辉, 刘志勇, 鲁玉明, 蔡传兵

Fabricating RE₂Zr₂O₇ Buffer Layers by Low Cost Electrodeposition

CAI Zeng-Hui, LIU Zhi-Yong, LU Yu-Ming, CAI Chuan-Bing

图1 不同Gd 3+ 、Zr 4+ 摩尔配比的溶液在0.5 mAcm 2 的电流密度下制得的60 nm 厚GZO薄膜的XRD图谱
Fig. 1 XRD patterns of 60 nm thick GZO samples prepared at the current density of 0.5 mAcm 2 in solutions with different mole ratios of Gd 3+ to Zr 4+ a 7:3; b 6:4; c 5:5; d 3:7