退火温度对TiO<sub>2</sub>基电阻开关器件性能的影响

退火温度对TiO₂基电阻开关器件性能的影响

李红霞, 季振国, 席俊华

Effects of Annealing Temperatures on Resistive Switching Characteristics of TiO₂ Based ReRAM

LI Hong-Xia, JI Zhen-Guo, XI Jun-Hua

图5 500#cod#x002da;C 退火AuTiO 2 n + -Si器件信息保持特性
Fig. 5 Retention time of HRS and LRS in AuTiO 2 n + -Si device annealed at 500℃