Effects of Annealing Temperatures on Resistive Switching Characteristics of TiO2 Based ReRAM
LI Hong-Xia, JI Zhen-Guo, XI Jun-Hua
图4 不同温度退火器件的高、低阻态电阻值及其高低阻值比 Fig. 4 Resistances in high and low resistance states and the ratio between HRS and LRS resistances of AuTiO 2 n + -Si devices as functions of different annealing temperatures