退火温度对TiO2基电阻开关器件性能的影响
李红霞, 季振国, 席俊华

Effects of Annealing Temperatures on Resistive Switching Characteristics of TiO2 Based ReRAM
LI Hong-Xia, JI Zhen-Guo, XI Jun-Hua
图3 不同温度退火AuTiO 2 n + -Si器件的 I - V 特性曲线
Fig. 3 I - V characteristics of Au TiO 2 n + -Si devices as functions of annealing temperatures