正对电极结构型碳化硅光导开关的制备与性能研究
常少辉1,2, 刘学超1, 黄维1, 周天宇1,2, 杨建华1, 施尔畏1

Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches
CHANG Shao-Hui1,2, LIU Xue-Chao1, HUANG Wei1, ZHOU Tian-Yu1,2, YANG Jian-Hua1, SHI Er-Wei1
图6 衬底厚度为0.40 mm的光导开关的暗电流特性
Fig. 6 Dependence of dark current on the bias voltage of SiC PCSS with the substrate thickness of 0.4 nm