正对电极结构型碳化硅光导开关的制备与性能研究
常少辉1,2, 刘学超1, 黄维1, 周天宇1,2, 杨建华1, 施尔畏1

Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches
CHANG Shao-Hui1,2, LIU Xue-Chao1, HUANG Wei1, ZHOU Tian-Yu1,2, YANG Jian-Hua1, SHI Er-Wei1
图3 衬底厚度为0.40 mm的光导开关在不同的单脉冲能量激发下的电流-时间波形图
Fig. 3 Effect of excited energy on the current-time properties of PCSS with the substrate thickness of 0.40 mm with the excited wavelength of 532 nm and the bias voltage of 2.5 kV