采用水基原子层沉积工艺在石墨烯上沉积Al2O3介质薄膜研究
张有为1,2, 万里1, 程新红2, 王中健2, 夏超2, 曹铎2, 贾婷婷2, 俞跃辉2

Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene
ZHANG You-Wei1,2, WAN Li1, CHENG Xin-Hong2, WANG Zhong-Jian2, XIA Chao2, CAO Duo2, JIA Ting-Ting2, YU Yue-Hui2
图5 a新鲜制备的石墨烯, b采用TMAH 2 O工艺在 120℃沉积70个循环Al 2 O 3 薄膜, c采用TMAO 3 工艺在 100℃沉积70个循环Al 2 O 3 薄膜的拉曼光谱
Fig. 5 Raman spectra of a pristine single graphene layer, b after 70 cycles TMAH 2 O ALD processes at 120℃, cafter 70 cycles TMAO 3 ALD processes at 100℃