采用水基原子层沉积工艺在石墨烯上沉积Al<sub>2</sub>O<sub>3</sub>介质薄膜研究

采用水基原子层沉积工艺在石墨烯上沉积Al₂O₃介质薄膜研究

张有为^1,², 万里¹, 程新红², 王中健², 夏超², 曹铎², 贾婷婷², 俞跃辉²

Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene

ZHANG You-Wei^1,², WAN Li¹, CHENG Xin-Hong², WANG Zhong-Jian², XIA Chao², CAO Duo², JIA Ting-Ting², YU Yue-Hui²

图2 采用TMAO 3 工艺在100℃沉积Al 2 O 3 后石墨烯表面的AFM照片
Fig. 2 AFM image of Al 2 O 3 films deposited on graphene at 100℃ using TMA and O 3 as precursors