采用水基原子层沉积工艺在石墨烯上沉积Al<sub>2</sub>O<sub>3</sub>介质薄膜研究

采用水基原子层沉积工艺在石墨烯上沉积Al₂O₃介质薄膜研究

张有为^1,², 万里¹, 程新红², 王中健², 夏超², 曹铎², 贾婷婷², 俞跃辉²

Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene

ZHANG You-Wei^1,², WAN Li¹, CHENG Xin-Hong², WANG Zhong-Jian², XIA Chao², CAO Duo², JIA Ting-Ting², YU Yue-Hui²

图1 采用TMAH 2 O工艺分别在a60℃、b120℃、c160℃和d240℃石墨烯表面沉积的Al 2 O 3 薄膜AFM照片
Fig. 1 AFM images of Al 2 O 3 films deposited on graphene at a 60℃, b 120℃, c 160℃ and d 240℃, using TMA and H 2 O as precursors