用于GaN基发光二极管的蓝宝石图形衬底制备进展
崔林1, 汪桂根1, 张化宇1, 周福强1, 韩杰才1,2

Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes
CUI Lin1, WANG Gui-Gen1, ZHANG Hua-Yu1, ZHOU Fu-Qiang1, HAN Jie-Cai1,2
图8 铝纳米结构矩阵在450℃氧化a和在1200℃退火转变为单晶Al 2 O 3 b的SEM照片 [ 64 ]
Fig. 8 SEM images of a aluminum nanostructure array after oxidation at 450℃ and b epitaxial conversion to single crystal Al 2 O 3 after annealed at 1200℃ [ 64 ]