用于GaN基发光二极管的蓝宝石图形衬底制备进展

崔林¹, 汪桂根¹, 张化宇¹, 周福强¹, 韩杰才^1,²

Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes

CUI Lin¹, WANG Gui-Gen¹, ZHANG Hua-Yu¹, ZHOU Fu-Qiang¹, HAN Jie-Cai^1,²

图1 蓝宝石图形衬底制备GaN外延层中位错的侧向生长过程 [ 19 ]
Fig. 1 Lateral growth process of dislocation in GaN epitaxial layers on patterned sapphire substrates [ 19 ]