4H-SiC高速同质外延研究
朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1

High-speed Homoepitaxial Growth of 4H-SiC
ZHU Ming-Xing1,2, SHI Biao1,2, CHEN Yi1, LIU Xue-Chao1, SHI Er-Wei1
图5 CSi为a 0.5、b1.5和c2.5时对应的外延膜表面形貌光学照片
Fig. 5 Optical images of surface morphology for epi-layers grown with CSi of a 0.5, b 1.5 and c 2.5