4H-SiC高速同质外延研究
朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1

High-speed Homoepitaxial Growth of 4H-SiC
ZHU Ming-Xing1,2, SHI Biao1,2, CHEN Yi1, LIU Xue-Chao1, SHI Er-Wei1
图4 生长速率为a 2.2 #cod#x003bc;mh、b 3.0 #cod#x003bc;mh、c 4.0 #cod#x003bc;mh和d 4.7 #cod#x003bc;mh时外延膜表面形貌光学图片
Fig. 4 Optical images of surface morphology for epi-layers grown at a 2.2 #cod#x003bc;mh, b 3.0 #cod#x003bc;mh, c 4.0 #cod#x003bc;mh and d 4.7 #cod#x003bc;mh Insert in Fig. 4a is the enlarge of triangle defects