4H-SiC高速同质外延研究
朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1

High-speed Homoepitaxial Growth of 4H-SiC
ZHU Ming-Xing1,2, SHI Biao1,2, CHEN Yi1, LIU Xue-Chao1, SHI Er-Wei1
图3 SiH 4 流量a以及CSib对生长速率的影响
Fig. 3 Dependence of growth rate on SiH 4 flow rate a and CSi ratio b The inset SEM graph is the cross-sectional view of the epi-layer