4H-SiC高速同质外延研究
朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1

High-speed Homoepitaxial Growth of 4H-SiC
ZHU Ming-Xing1,2, SHI Biao1,2, CHEN Yi1, LIU Xue-Chao1, SHI Er-Wei1
图9 KOH腐蚀后外延膜表面光学形貌照片
Fig. 9 Optical images of the surface morphology for epi-layers after KOH etching a Without initial stage optimized; b with initial stage optimized. The growth rate is 5.5 #cod#x003bc;mh. The etching condition is 510℃ KOH, 5 min