4H-SiC高速同质外延研究
朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1

High-speed Homoepitaxial Growth of 4H-SiC
ZHU Ming-Xing1,2, SHI Biao1,2, CHEN Yi1, LIU Xue-Chao1, SHI Er-Wei1
图8 高生长速率5.5 #cod#x003bc;mh时无界面生长a与有界面生长b外延膜表面形貌光学照片
Fig. 8 Optical images of the surface morphology for epi-layers grown without initial stage optimized a and with initial stage optimized b