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4H-SiC高速同质外延研究
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朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1 |
High-speed Homoepitaxial Growth of 4H-SiC
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ZHU Ming-Xing 1,2, SHI Biao 1,2, CHEN Yi 1, LIU Xue-Chao 1, SHI Er-Wei 1
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图8 高生长速率5.5 #cod#x003bc;mh时无界面生长a与有界面生长b外延膜表面形貌光学照片 Fig. 8 Optical images of the surface morphology for epi-layers grown without initial stage optimized a and with initial stage optimized b |
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