4H-SiC高速同质外延研究
朱明星1,2, 石彪1,2, 陈义1, 刘学超1, 施尔畏1

High-speed Homoepitaxial Growth of 4H-SiC
ZHU Ming-Xing1,2, SHI Biao1,2, CHEN Yi1, LIU Xue-Chao1, SHI Er-Wei1
图7 衬底a、生长速率为2.2 #cod#x003bc;mh b和3.5 #cod#x003bc;mh c外延膜KOH腐蚀后光学照片KOH腐蚀条件: 510℃, 5 min
Fig. 7 Optical images of substrate a, epi-layers grown at 2.2 #cod#x003bc;mh b and 3.5 #cod#x003bc;mh c after etching Etching condition is 510℃ KOH, 5 min