Thermal Etching Characteristics of AgInSbTe Phase Change Film
LI Hao1,2, GENG Yong-You1, WU Yi-Qun1,3
图4 退火前后AgInSbTe薄膜的腐蚀速度随腐蚀时间的变化腐蚀剂为0.001 molL的NaOH溶液 Fig. 4 Etching rates of the films before and after annealing as function of etching time in 0.001 molL NaOH solution a as-deposited after annealed at b 200℃, c 250℃ and d 300℃