Journal of Inorganic Materials

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Ti:Sapphire Laser Pumped Cr4+,Nd3+:YAG Self-Q-Switched Microchip Laser

DONG Jun; DENG Pei-Zhen; ZHANG Ying-Hua; LIU Yu-Pu; XU Jun; CHEN Wei   

  1. Shanghai Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Shanghai 201800; China
  • Received:2000-01-28 Revised:2000-02-24 Published:2001-01-20 Online:2001-01-20

Abstract: Using a Ti:sapphire laser as the pumping source in the CW mode, the self-Q-switched laser in the co-doped Cr4+,Nd3+:YAG microchip
with 1mm thickness was demonstrated. The output Q-switched traces are very stable, the threshold pumping power is as low as 30 mW, the pulse duration is as short as 100 ns. And the pulse
width keeps constant and pulse repetition rate is varied with the variation of the pumping power. The slope efficiency is varied with the
transmission of output coupler at 1064nm, and the slope efficiency is as high as 20% for 5% transmission of output coupler at 1064nm. This
can lead to develop the diode laser pumped monolithic self-Q-switched solid-state microchip lasers.

Key words: Cr,Nd:YAG crystal, self-Q-switched, microchip laser, Ti:sapphire laser

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