Hall Measurements, FTIR and EPR for n-Type Boron and Phosphorus Co-doped Diamond Films

Abstract

Abstract: Low resistivity n-type diamond films were prepared by boron and phosphorus co-doping with the ion implantation method.
Hall effect measurements show that the samples have nearly equivalent carrier concentration while the Hall mobility and conductivity of B-P
co-doped diamond films are higher than those of P doped diamond films. FTIR measurements show that the formation of B-H complexes passivates
the acceptor of boron and prevents the phosphorus from passivating by boron. EPR and Raman measurements indicate that the B-P co-doped diamond
films have more perfect lattice than those of P doped diamond films, which is benefit to improve the carrier mobility and decrease the resistivity.

Key words: CVD diamond films, co-doping, n-type, resistivity

CLC Number:

TD874
O484

HU Xiao-Jun,LI Rong-Bin,SHEN He-Sheng,DAI Yong-Bing,HE Xian-Chang. Hall Measurements, FTIR and EPR for n-Type Boron and Phosphorus Co-doped Diamond Films[J]. Journal of Inorganic Materials.

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