Abstract: At the substrate temperature of 620℃, crystalline Ta₂O₅ films were sputtered by introducing suitable negative substrate bias of 100～200V.
It was thought that the ion bombardment to the substrate was enhanced with introducing the negative substrate bias. The diffusion and looseness of
deposited particles on the surface of substrate were accelerated. Consequently, the crystallization of Ta₂O₅ films was improved and
the crystallization temperature was lowered. Meanwhile, the C-V result indicated that the dielectric properties of Ta₂O₅ films were further
improved by introducing negative substrate bias.

Key words: Ta₂O₅, dielectric films, crystallization temperature, bias