Abnormal Behavior of B2O3 Vapor Dopants in BaTiO3 Based PTCR Ceramics

Abstract

Abstract: The PTCR (Positive Temperature Coefficient Resistivity) effect of BaTiO₃based semiconducting ceramics is usually allied to the donor or acceptor. B₂O₃ with
high vapor pressure at high temperatures can be used as vapor dopants. The behavior of B₂O₃ vapor dopants was studied in BaTiO₃ based semiconducting
ceramics. The dramatic results show that the resistivity jumping of the samples is improved distinctly, in the mean time, the room temperature resistivity is also
increased. The enhancement of the PTCR effect of the samples doped with B₂O₃ vapor is possibly associated with the interstice of boron ion and barium vacancy or
their related composite defects.

Key words: B₂O₃, BaTiO₃, PTCR

CLC Number:

TN304

QI Jian-Quan,LI Long-Tu,ZHU Qing,Wang Yong-Li,GUI Zhi-Lun. Abnormal Behavior of B₂O₃ Vapor Dopants in BaTiO₃ Based PTCR Ceramics[J]. Journal of Inorganic Materials.

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Abnormal Behavior of B₂O₃ Vapor Dopants in BaTiO₃ Based PTCR Ceramics

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