[1] Louis R. J. Phys. Chem., 1986, 90: 2555--2560. [2] Vossmeyer T, Delonno E, Heath J R. Angew. Chem. Int. Ed. Engl., 1997, 36: 1080--1083. [3] Ohara P C, Heath J R, Gelbart W M. Angew. Chem. Int. Ed. Engl., 1997, 36: 1078--1080. [4] Merirav U, Foxman E B. Semilonductor Sci. Technol., 1998, 11: 255--262. [5] Andres R P, Bielefeld J D, Henderson J I, et al. Science, 1996, 273: 1690--1693. [6] Willner I, Patolsky F, Wasserman J. Angew. Chem. Int. Ed. Engl., 2001, 40: 1861--1864. [7] Hu J, Li L-S, Yang W, et al. Science, 2001, 292: 2060--2063. [8] Peng Z A, Peng X. J. Am. Chem. Soc., 2001, 123: 1389--1395. [9] Kuan X, Huang Y, Cui Y, et al. Nature, 2001, 409: 66--68. [10] Manna L, Scher E C, Alivisatos A P. J. Am. Chem. Soc., 2000, 122: 12700--12706. [11] Jun Y W, Lee S M, Kang N J, et al. J. Am. Chem. Soc., 2001, 123: 5150--5151. [12] Jun Y, Jung Y, Cheon J. J. Am. Chem. Soc., 2002, 124: 615--619. [13] Gao F, Lu Q, Xie S, Zhao D. Adv. Mater., 2002, 14: 1537--1540. [14] Arguello C A, Rousseau D L, Porto S P S. Phys. Rev., 1969, 181: 1351--1355. [15] Nada K K, Sahu S N. Solid State Comm., 1999, 111: 671--675. [16] Nie Q L, Yuan Q L, Chen W X, et al. Journal of Crystal Growth, 2004, 265: 420--424. [17] 聂秋林, 袁求理, 徐铸德(NIE Qiu-Lin, et al). 无机材料学报(Journal of Inorganic Materials), 2004, 19 (6): 1411--1414. [18] Ma X C, Xu F, Qian Y T. Materials Research Bulletin, 2005, 40: 2180--2184.
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