Crystallization of Amorphous SiCN Ceramic Annealed in Vacuum

doi:10.3724/SP.J.1077.2009.00827

Abstract

Abstract: SiCN ceramic was fabricated by electro-thermal pyrolysis using hexamethyldisilazane as precursor. X-ray diffraction and transmission electron microscope were employed to study crystallization process of amorphous SiCN after annealing at temperature from 1700℃ to 1900℃ in vacuum. Decomposition-crystallization mechanism was used to characterize its crystallization process. Amorphous SiCN begin to decompose below 1300℃ in vacuum and Si-C-enriched districts are formed and then changes to form β-SiC crystal. Crystallinity degree increases as treated temperature rises. Phase transition from β-SiC to α-SiC occurs after annealing at 1700℃. The nitrogen is released in the form of N₂ and Si₃N₄ crystal is not detected though it often exists in the SiCN annealed in N₂ atmosphere.

Key words: amorphous SiCN, crystallization, phase transition, microstructure

CLC Number:

TB332

XIA Yi,QIAO Sheng-Ru,WANG Qiang-Qiang,ZHANG Cheng-Yu,HAN Dong,LI Mei. Crystallization of Amorphous SiCN Ceramic Annealed in Vacuum[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2009.00827.

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Crystallization of Amorphous SiCN Ceramic Annealed in Vacuum

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