Journal of Inorganic Materials

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Structure and Ferroelectric Properties of Ti4+-doped BiFeO3 Ceramics

ZHENG Chao-Dan1,2, ZHANG Duan-Ming1, LIU Xin-Ming2, LIU Chao-Jun2, YU Chun-Rong2, YU Jun2   

  1. 1. School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2008-10-23 Revised:2008-12-24 Published:2009-07-20 Online:2009-07-20

Abstract: BiFe1-xTixO3 (x=0,0.05,0.10,0.15 and 0.20) (BFTxO) ceramics were prepared by the solid-state reaction technology. The effects of Ti doping on the microstructure, morphology, the ferroelectric properties and ferroelectric-paraelectric phase transition were investigated. The result of X-ray diffraction pattern implies that the rhombohedral structure is distorted to an orthorhombic structure by Ti doping. The measured Raman scattering spectra also show that Ti doping modifies the ceramic structure from rhombohedral to orthorhombic. Compared with the pure counterparts, the average grain sizes of the BiFe1-xTixO3 (x=0.05、0.10) ceramics decrease with the increase of Ti4+ concentration. The leakage current density and the remnant polarization of the BiFe1-xTixO3 (x=0.05,0.10) are improved due to the decreased oxygen vacancies by Ti4+ doping. The current density values for the pure BiFeO3 and BiFe0.95Ti0.05O3 ceramics are 1.4×10-4A/cm2 and 7.3×10-6A/cm2 at 100V, respectively. The remnant polarization (2Pr) of BiFe0.95Ti0.05O3 ceramic is 2.78μC/cm2 at 8kV/mm. DTA and Raman scattering spectra results indicate that the ferroelectric transition temperature (Tc) of the BFTxO crystal is influenced by the content of Ti ions. With the increase of Ti content, the ferroelectric transition temperature decreases.

Key words: BiFe1-xTixO3 ceramics, ferroelectric property, leakage conduction

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